Optoelectronic Properties of MoS ₂ in Proximity to Carrier Selective Metal Oxides

Transition metal dichalcogenides are an exciting class of new absorber materials for photovoltaic applications due to their unique optoelectronic properties in the single few-layer regime. In recent years, these have been intensively studied, often utilizing conventional substrates such as sapphire and silicon dioxide on silicon. This study investigates optical molybdenum disulfide (MoS2) mono-, bi-, multilayer films prepared by flake exfoliation atomic layer deposition (ALD). These transferred different relevant carrier-selective contacts, titanium oxide, titanium–titanium silicon–silicon reference substrates. Raman photoluminescence (PL) spectra single-crystalline exfoliated MoS2 flakes ALD-grown compared order investigate influence contact corresponding transitions MoS2. It is demonstrated that PL layers doping charge transfer effects, similar effects observed both layers.